Russell D. Dupuis is being recognized for his seminal contributions to the metalorganic chemical vapor deposition (MOCVD) materials growth process used today for the commercial production of LEDs. Dupuis is a chaired professor in electrical and computer engineering (ECE) at the Georgia Institute of Technology, a position he has held since 2003. He is currently studying the growth of III-V compound semiconductor devices by metalorganic chemical vapor deposition (MOCVD), including materials in the InAlGaN, InAlGaP, InAlGaAsSb, and InAlGaAsP systems for optoelectronic and electronic applications.

From 1989 to 2003, he was a chaired professor in ECE at the University of Texas at Austin. Before that he worked at AT&T Bell Laboratories as a member of technical staff (MTS) (1979–1986) and a Distinguished MTS (1986–1989) in physics research. As an MTS at Rockwell International (1975–1979) he was the first to demonstrate that MOCVD could be used for the growth of high-quality semiconductor thin films and devices, including the first room-temperature quantum-well diode lasers. He began his career as an MTS at Texas Instruments (1973–1975).

Dupuis earned his BS, MS, and PhD degrees in electrical engineering from the University of Illinois at Urbana-Champaign.